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Thunderbolt 3 Controller QNAP 6404 TS Pro 3×4 PCIe Slot (Intel – i219-V Ultra Wide ISOBUS)

Thunderbolt 3 Controller QNAP 6404 TS Pro 3×4 PCIe Slot (Intel – i219-V Ultra Wide ISOBUS)
Thunderbolt 3 Controller QNAP 6404 TS Pro 3×4 PCIe Slot (Intel – i219-V Ultra Wide ISOBUS) 4-Core Processor with 2.0 GHz Speed

Length: 6750 views Overview

Overview

QNAP NAS models powered by Intel® platforms contain a wide range of storage options and work seamlessly with numerous external devices.

For QNAP TS-114U and TS-114 Pro models, the available storage space can be expanded via the USB 3.0 and SATA3 interface. For the TS-412 Pro, TS-412 Pro-2, TS-212 Pro-2, TS-212 Pro-2+ and TS-412 Plus models, the SAS interface offers great performance. Thunderbolt 3 interface is supported by numerous QNAP models including the TS-832 Pro series, TS-832L Pro-series, TS-712 and TS-448 series. In addition, all QNAP NAS models support USB 3.1 Gen2, standard or high-speed eSATA interface, and eSATA for the TS-412 series.

When purchasing a QNAP NAS model, consider the available storage options. The TS-114U and TS-114 Pro series support only 2 SATA3 interface ports. The two TS-212Pro and TS-412Pro models have one SATA3 and three SATA2 interface ports; the TS-412Pro-2, TS-412 Pro-2+ and TS-412 Plus models are compatible with two SATA3 and three SATA2 interface ports. The TS-832 Pro series and TS-832L Pro-series NAS models support one or two SATA3 and six SATA2 interface ports.

A wide range of QNAP NAS models are available with varying storage options.

These NAS models are available for rackmount and desktop use.

When purchasing a QNAP NAS model, consider the following:

the type of the NAS device you are purchasing;

the NAS size;

the model OS of the server;

the network size; and

the intended location of use.

QNAP®

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BassBox Pro 6.0.2 Ok Serial Key keygen · Download 100% Working BassBox Pro 6.0.2 Full Version Serial Number With CrackThe present invention relates to a semiconductor device and a method for manufacturing the same and, more particularly, to a technique that is effectively applied to a semiconductor device having a power device, e.g., a DMOS (Double Diffused Metal Oxide Semiconductor) transistor, and a technique relating to a method for manufacturing the semiconductor device.
Semiconductor devices having a power device and a control device are used in various products such as portable devices, vehicle-mounted power supplies and power steering systems. With miniaturization and higher performance of devices, the power device and the control device are integrated in the same chip or semiconductor element, so that mounting and control can be performed at low cost. One of the techniques for achieving this integration is the manufacture of a System LSI by performing design work, design verification work and manufacture of a base chip by a simple process at high speed. Such a System LSI is disclosed in, for example, Jpn. Pat. Appln. KOKAI Publication No. 2004-052318.
In this System LSI, a pair of semiconductor regions having bipolar transistors with both the N-type and P-type dopants are formed in a single cell region and a pair of semiconductor regions having N-type and P-type DMOS transistors are formed in a single cell region.
By the way, in the System LSI described in Jpn. Pat. Appln. KOKAI Publication No. 2004-052318, the semiconductor regions having the bipolar transistors and the semiconductor regions having the DMOS transistors are formed by a known poly-Si process in the same mask process.
However, the semiconductor regions having the bipolar transistors and the semiconductor regions having the DMOS transistors are formed by the same mask process as described above, so that no sufficient
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